IRF630NSTRR
MOSFET N-CH 200V 9.3A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF630NSTRR is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-to-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 9.3A at 25°C (Tc), with a maximum power dissipation of 82W (Tc). The on-resistance (Rds On) is specified at 300mOhm maximum at 5.4A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 35 nC maximum at 10V and an input capacitance (Ciss) of 575 pF maximum at 25V. The IRF630NSTRR is housed in a TO-263-3, D2PAK package for surface mounting and operates across a temperature range of -55°C to 175°C (TJ). This component finds application in industrial and automotive power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 5.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 82W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 575 pF @ 25 V |
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