IRF630NLPBF
MOSFET N-CH 200V 9.3A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' HEXFET® IRF630NLPBF is an N-Channel Power MOSFET with a 200V drain-to-source voltage (Vdss). This through-hole component, packaged in a TO-262-3 Long Leads configuration, offers a continuous drain current of 9.3A (Tc) and a maximum power dissipation of 82W (Tc). Key electrical characteristics include a maximum on-resistance (Rds On) of 300mOhm at 5.4A and 10V Vgs, and a gate charge (Qg) of 35 nC at 10V Vgs. Input capacitance (Ciss) is a maximum of 575 pF at 25V Vds. The device operates across a temperature range of -55°C to 175°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±20V. This MOSFET is commonly utilized in power supply units, motor control, and lighting applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 5.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 82W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 575 pF @ 25 V |
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