IRF630NL
MOSFET N-CH 200V 9.3A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF630NL, features a Drain-to-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 9.3A at 25°C. This device offers a maximum On-Resistance (Rds On) of 300mOhm at 5.4A and 10V. The IRF630NL has a maximum power dissipation of 82W (Tc) and a gate charge (Qg) of 35nC at 10V. Input capacitance (Ciss) is rated at 575pF maximum at 25V. Designed for through-hole mounting in a TO-262 package, this MOSFET operates within a temperature range of -55°C to 175°C. It is suitable for applications in industrial and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 5.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 82W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 575 pF @ 25 V |