IRF6218SPBF
MOSFET P-CH 150V 27A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel Power MOSFET, part number IRF6218SPBF. This device features a Drain-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 27A at 25°C (Tc). The Rds(On) is specified at a maximum of 150mOhm at 16A, 10V. With a maximum power dissipation of 250W (Tc), this MOSFET is designed for efficient power handling. Key parameters include a Gate Charge (Qg) of 110 nC at 10V and an Input Capacitance (Ciss) of 2210 pF at 25V. The device utilizes MOSFET technology and is available in a surface mount D2PAK package (TO-263-3, D2PAK). This component is suitable for applications in industrial, automotive, and power management sectors. The maximum Gate-Source Voltage (Vgs) is ±20V, and the Gate Threshold Voltage (Vgs(th)) is 5V at 250µA.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 25 V |
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