IRF6217TRPBF-1
MOSFET P-CH 150V 700MA 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series P-channel power MOSFET, part number IRF6217TRPBF-1. This device features a Drain-to-Source Voltage (Vdss) of 150V and a continuous drain current (Id) of 700mA at 25°C. The Rds On is specified at 2.4 Ohms maximum at 420mA and 10V gate drive. With a maximum power dissipation of 2.5W (Ta), this MOSFET is suitable for applications requiring efficient power switching. Key parameters include a gate charge (Qg) of 9 nC maximum at 10V and input capacitance (Ciss) of 150 pF maximum at 25V. The device operates within a temperature range of -55°C to 150°C (TJ). It is supplied in an 8-SOIC package with Tape & Reel (TR) packaging. This component is commonly utilized in industrial and consumer electronics power management and switching circuits.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 700mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2.4Ohm @ 420mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V |
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