IRF6217TRPBF
MOSFET P-CH 150V 700MA 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel Power MOSFET, part number IRF6217TRPBF, features a 150V drain-source breakdown voltage and 700mA continuous drain current at 25°C. This device offers a maximum Rds(on) of 2.4 Ohms at 420mA and 10V gate-source voltage. With a gate charge (Qg) of 9 nC maximum at 10V and input capacitance (Ciss) of 150 pF maximum at 25V, it is designed for efficient switching applications. The IRF6217TRPBF is packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration and supports an operating temperature range of -55°C to 150°C. Power dissipation is rated at 2.5W. This component is utilized in various industrial applications including power management and control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 700mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2.4Ohm @ 420mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
