IRF6216TRPBF-1
MOSFET P-CH 150V 2.2A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF6216TRPBF-1, offers a 150V drain-to-source breakdown voltage and a continuous drain current capability of 2.2A at 25°C (Ta). This device features a maximum on-resistance (Rds On) of 240mOhm at 1.3A and 10V gate-source voltage (Vgs). With a gate charge (Qg) of 49 nC at 10V and input capacitance (Ciss) of 1280 pF at 25V, it is designed for efficient switching. The SOT-223 package facilitates surface mounting. This P-channel MOSFET is suitable for applications in industrial automation, power management, and consumer electronics, operating across a temperature range of -55°C to 150°C. The part is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1280 pF @ 25 V |
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