IRF6216TRPBF
MOSFET P-CH 150V 2.2A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF6216TRPBF, offers a 150V Vdss rating and a continuous drain current of 2.2A (Ta) at 25°C. This surface mount device in an 8-SOIC package features a maximum Rds On of 240mOhm at 1.3A and 10V gate drive. Key parameters include a gate charge of 49 nC @ 10V and input capacitance of 1280 pF @ 25V. With a power dissipation of 2.5W (Ta) and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for power management applications in industries such as industrial automation and consumer electronics. The component is supplied on tape and reel (TR) for automated assembly.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1280 pF @ 25 V |
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