IRF6216PBF
MOSFET P-CH 150V 2.2A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF6216PBF, is a surface-mount device designed for applications requiring high voltage and moderate current handling. This component features a Drain-Source Voltage (Vdss) of 150 V and a continuous drain current capability of 2.2 A at 25°C. The Rds On is specified at a maximum of 240 mOhm at 1.3 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 49 nC at 10 V and an input capacitance (Ciss) of 1280 pF at 25 V. The device operates within a temperature range of -55°C to 150°C. The IRF6216PBF is housed in an 8-SOIC package and finds utility in power management, battery charging systems, and general-purpose switching applications within industrial and automotive sectors. The maximum power dissipation is 2.5W.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1280 pF @ 25 V |
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