IRF6215STRRPBF
MOSFET P-CH 150V 13A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF6215STRRPBF, is a surface-mount device designed for high-efficiency power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 150 V and a continuous drain current (Id) of 13 A at 25°C (Tc). Its low on-resistance (Rds On) of 290 mOhm is achieved at 6.6 A and 10 V gate drive. The package is a TO-263-3, D2PAK, supplied on tape and reel. Key parameters include a gate charge (Qg) of 66 nC maximum at 10 V and input capacitance (Ciss) of 860 pF maximum at 25 V. Power dissipation is rated at 3.8 W (Ta) and 110 W (Tc). This MOSFET is suitable for use in industrial automation, power supplies, and automotive electronics.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
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