IRF6215SPBF
MOSFET P-CH 150V 13A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF6215SPBF, is a surface-mount device designed for power management applications. This component features a Drain-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 13A at 25°C (Tc). The IRF6215SPBF offers a maximum Rds On of 290mOhm at 6.6A and 10V gate drive. Key electrical characteristics include a Gate Charge (Qg) of 66 nC and Input Capacitance (Ciss) of 860 pF, both specified at 10V and 25V respectively. This device operates within a temperature range of -55°C to 175°C (TJ). The TO-263-3, D2PAK package facilitates efficient thermal dissipation, with a maximum power dissipation of 110W (Tc). The IRF6215SPBF is suitable for use in power supplies, motor control, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
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