IRF6215PBF
MOSFET P-CH 150V 13A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel Power MOSFET, part number IRF6215PBF. This through-hole device features a 150 V drain-source breakdown voltage and a continuous drain current of 13 A at 25°C (Tc). With a maximum power dissipation of 110 W (Tc) and a low on-resistance of 290 mOhm at 6.6 A and 10 V, this MOSFET is suitable for applications requiring efficient power switching. Key parameters include a gate charge of 66 nC at 10 V and input capacitance of 860 pF at 25 V. The operating junction temperature range is -55°C to 175°C. This component is commonly utilized in industrial and automotive power management systems. The TO-220AB package provides robust thermal performance.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
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