IRF6215L
MOSFET P-CH 150V 13A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF6215L, is a high-performance component designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 13A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 290mOhm at 6.6A and 10V Vgs, it offers efficient power switching. The gate drive voltage is specified at 10V. Key parameters include a Gate Charge (Qg) of 66 nC at 10V and Input Capacitance (Ciss) of 860 pF at 25V. The maximum power dissipation is 3.8W (Ta) and 110W (Tc). Operating across a temperature range of -55°C to 175°C, the IRF6215L is housed in a TO-262-3 Long Leads package, suitable for through-hole mounting. This MOSFET is commonly utilized in industrial, automotive, and power supply applications requiring robust P-channel switching.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
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