IRF6201TRPBF
MOSFET N-CH 20V 27A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® MOSFET, part number IRF6201TRPBF, is an N-Channel device with a Drain-Source Voltage (Vdss) of 20V. This surface mount component, presented in an 8-SOIC package, features a continuous drain current capability of 27A at 25°C and a maximum power dissipation of 2.5W. The Rds On is specified at a maximum of 2.45mOhm at 27A and 4.5V gate-source voltage. Key parameters include a typical Gate Charge (Qg) of 195nC at 4.5V and input capacitance (Ciss) of 8555pF at 16V. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for applications in industrial and automotive power management systems. The component is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.45mOhm @ 27A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.1V @ 100µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8555 pF @ 16 V |
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