IRF6100PBF
MOSFET P-CH 20V 5.1A 4FLIPFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6100PBF is a P-Channel Power MOSFET designed for demanding applications. This device features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5.1A at 25°C. The low on-resistance (Rds On) of 65mOhm is achieved at 5.1A and 4.5V Vgs, with a recommended gate drive range of 2.5V to 4.5V. Its 21 nC gate charge and 1230 pF input capacitance facilitate efficient switching performance. The IRF6100PBF is packaged in a compact 4-FlipFet™ surface mount package, offering a maximum power dissipation of 2.2W. This component is suitable for use in automotive, industrial, and consumer electronics power management systems. It operates across a wide temperature range of -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-FlipFet™ |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 5.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 4-FlipFet™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1230 pF @ 15 V |