IRF6100
MOSFET P-CH 20V 5.1A 4FLIPFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF6100, offers a 20V drain-source voltage and a continuous drain current of 5.1A at 25°C (Ta). This device features a low on-resistance of 65mOhm maximum at 5.1A and 4.5V Vgs. With a gate charge (Qg) of 21nC maximum at 5V Vgs and input capacitance (Ciss) of 1230pF maximum at 15V Vds, it is suitable for applications requiring efficient switching. The IRF6100 is available in a 4-FlipFet™ surface mount package and operates across a temperature range of -55°C to 150°C. Key drive voltages are 2.5V and 4.5V. This component finds application in power management and switching circuits within the automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-FlipFet™ |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 5.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 4-FlipFet™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1230 pF @ 15 V |
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