IRF60SC241ARMA1
MOSFET N-CH 60V 360A TO263-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies StrongIRFET™ N-Channel MOSFET, part number IRF60SC241ARMA1, offers a 60V drain-source voltage and a continuous drain current capability of 360A at 25°C (Tc). This device features a low on-resistance of 1.3mOhm maximum at 100A and 10V gate-source voltage. Designed for surface mounting within the PG-TO263-7 package, it boasts a maximum junction temperature of 175°C. Key parameters include a gate charge (Qg) of 388nC (max) at 10V and input capacitance (Ciss) of 16000pF (max) at 30V. Power dissipation is rated at 417W (Tc) and 2.4W (Ta). This component finds application in high-current power switching, motor control, and power supply designs across various industrial sectors.
Additional Information
Series: StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 360A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 417W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |
| Supplier Device Package | PG-TO263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 388 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16000 pF @ 30 V |
Request a Quote
Clients Also Buy
IRFH7085TRPBF
MOSFET N-CH 60V 100A PQFN
IRF200P223
MOSFET N-CH 200V 100A TO247AC
IRL40SC228
MOSFET N-CH 40V 557A D2PAK
