IRF5806TRPBF
MOSFET P-CH 20V 4A MICRO6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF5806TRPBF, offers a 20V drain-source breakdown voltage and 4A continuous drain current capability at 25°C ambient. This device features a low Rds(on) of 86mOhm maximum at 4A and 4.5V Vgs, with a threshold voltage (Vgs(th)) of 1.2V maximum at 250µA. The Micro6™(TSOP-6) package facilitates surface mounting, supporting a maximum power dissipation of 2W ambient. Key electrical characteristics include 11.4 nC gate charge (Qg) maximum at 4.5V and 594 pF input capacitance (Ciss) maximum at 15V. Operating temperature range is -55°C to 150°C. This component is suitable for applications in automotive, industrial, and consumer electronics power management.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 86mOhm @ 4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Micro6™(TSOP-6) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 594 pF @ 15 V |