IRF5806
MOSFET P-CH 20V 4A MICRO6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF5806, offers a 20V drain-to-source voltage rating and a continuous drain current capability of 4A at 25°C. This device features a low on-resistance of 86mOhm maximum at 4A and 4.5V Vgs. The P-Channel MOSFET is housed in a compact Micro6™(TSOP-6) surface mount package, suitable for applications requiring efficient power management. Key parameters include a gate charge of 11.4 nC maximum at 4.5V and input capacitance of 594 pF maximum at 15V. The operating temperature range is -55°C to 150°C. The IRF5806 is utilized in various industrial applications, including power supply circuits and motor control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 86mOhm @ 4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Micro6™(TSOP-6) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 594 pF @ 15 V |
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