IRF5805TRPBF
MOSFET P-CH 30V 3.8A MICRO6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel Power MOSFET, part number IRF5805TRPBF, is engineered for demanding applications. This device features a 30V drain-source voltage and a continuous drain current capability of 3.8A at 25°C ambient. The low on-resistance of 98mOhm at 3.8A and 10V Vgs minimizes conduction losses. With a gate charge (Qg) of 17 nC at 10V and input capacitance (Ciss) of 511 pF at 25V, it offers efficient switching performance. The Micro6™ (TSOP-6) package facilitates compact design and efficient heat dissipation, supporting a power dissipation of 2W (Ta). Operating across a wide temperature range of -55°C to 150°C, this MOSFET is suitable for use in automotive, industrial automation, and power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | Micro6™(TSOP-6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 511 pF @ 25 V |
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