IRF5805
MOSFET P-CH 30V 3.8A MICRO6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF5805, is a 30V device in a Micro6™(TSOP-6) surface mount package. This component offers a continuous drain current of 3.8A at 25°C with a maximum power dissipation of 2W (Ta). The Rds On is specified at a maximum of 98mOhm at 3.8A and 10V Vgs. Key electrical parameters include a gate charge of 17 nC (max) at 10V and input capacitance of 511 pF (max) at 25V. The device supports a Vgs range of ±20V and has a gate threshold voltage of 2.5V (max) at 250µA. This MOSFET is suitable for applications in consumer electronics and industrial automation where efficient power switching is required.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | Micro6™(TSOP-6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 511 pF @ 25 V |
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