IRF5804TRPBF
MOSFET P-CH 40V 2.5A MICRO6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF5804TRPBF. This surface mount device features a 40V drain-source breakdown voltage and a continuous drain current capability of 2.5A at 25°C ambient. The IRF5804TRPBF offers a maximum on-resistance of 198mOhm at 2.5A and 10V gate-source voltage. It is supplied in a Micro6™(TSOP-6) package, suitable for high-density applications. Key electrical parameters include a gate charge of 8.5 nC maximum at 10V and an input capacitance of 680pF maximum at 25V. This component is designed for operation across a wide temperature range of -55°C to 150°C. Its specifications make it suitable for applications in automotive, industrial control, and power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 198mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | Micro6™(TSOP-6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 25 V |