IRF5804
MOSFET P-CH 40V 2.5A MICRO6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF5804 is a P-Channel Power MOSFET designed for demanding applications. This component features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2.5A at 25°C, with a maximum power dissipation of 2W (Ta). The IRF5804 offers a low on-resistance (Rds On) of 198mOhm at 2.5A and 10V Vgs, and is specified with drive voltages ranging from 4.5V to 10V. Key parameters include gate charge (Qg) of 21 nC at 10V and input capacitance (Ciss) of 680 pF at 25V. The device operates with a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 3V at 250µA. This MOSFET is supplied in a Micro6™(TSOP-6) package, suitable for surface mount applications, and is available in tube packaging. It finds utility in various industrial sectors requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 198mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | Micro6™(TSOP-6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 25 V |
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