IRF5803TR
MOSFET P-CH 40V 3.4A MICRO6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF5803TR is a P-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 3.4A at 25°C. The On-Resistance (Rds On) is specified at a maximum of 112mOhm when drawing 3.4A with a 10V Gate-Source Voltage (Vgs). The device boasts a low gate charge of 37 nC at 10V Vgs and an input capacitance (Ciss) of 1110 pF at 25V Vds. Operating within a temperature range of -55°C to 150°C, this MOSFET is housed in a compact SOT-23-6 Thin (TSOT-23-6) package, referred to as Micro6™(TSOP-6) by the manufacturer. The maximum power dissipation is 2W. This component is suitable for use in automotive and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | Micro6™(TSOP-6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 25 V |
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