IRF5803D2TRPBF
MOSFET P-CH 40V 3.4A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies P-Channel MOSFET, part number IRF5803D2TRPBF, is a surface-mount device from the FETKY™ series. This component features a Drain-to-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 3.4A at 25°C. The device offers a maximum On-Resistance (Rds On) of 112mOhm at 3.4A and 10V. Integrated within its 8-SOIC package is a Schottky diode, providing isolated functionality. The maximum power dissipation is 2W. Key parameters include a Gate Charge (Qg) of 37 nC at 10V and Input Capacitance (Ciss) of 1110 pF at 25V. This MOSFET is suitable for applications requiring efficient power switching in automotive and industrial sectors. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 3.4A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 25 V |
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