IRF5803D2TR
MOSFET P-CH 40V 3.4A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies presents the IRF5803D2TR, a P-Channel MOSFET from the FETKY™ series. This component features a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 3.4A at 25°C. The device offers a maximum on-resistance (Rds On) of 112mOhm at 3.4A and 10V gate-source voltage. Key characteristics include an input capacitance (Ciss) of 1110pF at 25V and a gate charge (Qg) of 37nC at 10V. This surface-mount device is housed in an 8-SOIC package and supports a power dissipation of 2W. Integrated within its design is a Schottky diode, providing enhanced performance for applications in automotive and industrial power management. The operating temperature range is -55°C to 150°C.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 3.4A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 25 V |
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