IRF5803D2
MOSFET P-CH 40V 3.4A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies P-Channel MOSFET, part of the FETKY™ series, is offered in an 8-SOIC package. This device features a Drain-Source Voltage (Vdss) of 40V and a continuous drain current (Id) of 3.4A at 25°C, with a maximum power dissipation of 2W. The Rds On is specified at 112mOhm maximum at 3.4A and 10V gate drive. Key characteristics include an input capacitance (Ciss) of 1110pF maximum at 25V and a gate charge (Qg) of 37nC maximum at 10V. This MOSFET incorporates an isolated Schottky diode. It is suited for applications requiring efficient power switching and is commonly found in automotive and industrial power management systems. Operating temperature range is -55°C to 150°C.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 3.4A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 25 V |
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