IRF5803
MOSFET P-CH 40V 3.4A MICRO6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF5803, offers a 40V drain-source voltage and a continuous drain current of 3.4A at 25°C ambient. This device features a maximum on-resistance of 112mOhm at 3.4A drain current and 10V gate-source voltage. The IRF5803 is housed in a compact Micro6™ (TSOP-6) surface-mount package, with a power dissipation of 2W (Ta). Key electrical characteristics include a gate charge (Qg) of 37nC (max) at 10V Vgs and input capacitance (Ciss) of 1110pF (max) at 25V Vds. Maximum gate-source voltage is ±20V, and the threshold voltage (Vgs(th)) is 3V at 250µA. This component is suitable for applications in automotive, industrial, and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | Micro6™(TSOP-6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 25 V |
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