Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

IRF5802TR

Banner
productimage

IRF5802TR

MOSFET N-CH 150V 0.9A 6-TSOP

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies MOSFET N-Channel, part number IRF5802TR, offers a 150V drain-source voltage and 900mA continuous drain current at 25°C. This device features a low on-resistance of 1.2 Ohms maximum at 540mA and 10V gate-source voltage. The gate charge is specified at 6.8 nC maximum at 10V, with input capacitance Ciss reaching 88 pF maximum at 25V. Packaged in a Micro6™ (TSOP-6), this surface-mount component is suitable for applications in industrial and consumer electronics. It utilizes Metal Oxide technology and is supplied in Cut Tape packaging.

Additional Information

Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:
Technical Details:
PackagingCut Tape (CT)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C900mA (Ta)
Rds On (Max) @ Id, Vgs1.2Ohm @ 540mA, 10V
FET Feature-
Vgs(th) (Max) @ Id5.5V @ 250µA
Supplier Device PackageMicro6™(TSOP-6)
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds88 pF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
IRL3705ZLPBF

MOSFET N-CH 55V 75A TO262

product image
IRF3805STRLPBF

MOSFET N-CH 55V 75A D2PAK

product image
IPB073N15N5ATMA1

MOSFET N-CH 150V 114A TO263-3