IRF5802
MOSFET N-CH 150V 900MA MICRO6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF5802 is an N-Channel Power MOSFET designed for demanding applications. This device features a 150V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 900mA at 25°C. The IRF5802 offers a low on-resistance (Rds On) of 1.2 Ohms maximum at 540mA and 10V Vgs, with a gate charge (Qg) of 6.8 nC maximum at 10V. It has a maximum power dissipation of 2W (Ta) and is housed in a space-saving Micro6™(TSOP-6) surface mount package. The technology utilizes Metal Oxide Semiconductor for efficient switching. This component is suitable for use in power management, consumer electronics, and industrial automation sectors. The maximum gate-source voltage (Vgs) is ±30V, and the gate threshold voltage (Vgs(th)) is a maximum of 5.5V at 250µA.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 900mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 540mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | Micro6™(TSOP-6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 88 pF @ 25 V |
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