IRF5800TRPBF
MOSFET P-CH 30V 4A MICRO6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' HEXFET® IRF5800TRPBF is a P-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 4A at 25°C ambient. With a low on-resistance of 85mOhm maximum at 4A and 10V gate-source voltage, it minimizes conduction losses. The IRF5800TRPBF is housed in a compact Micro6™(TSOP-6) surface-mount package, suitable for demanding space constraints. Key parameters include a gate charge of 17nC maximum and an input capacitance of 535pF maximum. Operating across a wide temperature range of -55°C to 150°C, this MOSFET is utilized in various industries including automotive, industrial control, and power management solutions.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | Micro6™(TSOP-6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 535 pF @ 25 V |