IRF5800
MOSFET P-CH 30V 4A MICRO6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF5800, is a 30V device designed for demanding applications. This component features a 4A continuous drain current (Id) at 25°C and a maximum power dissipation of 2W (Ta). The surface mountable Micro6™(TSOP-6) package offers a compact footprint for high-density designs. Key electrical characteristics include a low on-resistance (Rds On) of 85mOhm maximum at 4A and 10V, and a gate charge (Qg) of 17nC maximum at 10V. Input capacitance (Ciss) is specified at 535pF maximum at 25V. The operating temperature range is -55°C to 150°C (TJ). This P-channel MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | Micro6™(TSOP-6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 535 pF @ 25 V |
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