IRF540ZSTRRPBF
MOSFET N-CH 100V 36A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF540ZSTRRPBF is an N-Channel Power MOSFET designed for high-performance switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 36A at 25°C (Tc), with a maximum power dissipation of 92W (Tc). The Rds(on) is specified at a maximum of 26.5mOhm at 22A and 10V gate drive. Key electrical characteristics include a Gate Charge (Qg) of 63 nC (max) at 10V and an Input Capacitance (Ciss) of 1770 pF (max) at 25V. The device operates within an extended temperature range of -55°C to 175°C (TJ). Supplied in a D2PAK (TO-263-3) surface mount package, this MOSFET is suitable for use in industrial, automotive, and power supply applications. The component is delivered in Tape & Reel (TR) packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 26.5mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 92W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1770 pF @ 25 V |
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