IRF540ZSTRLPBF
MOSFET N-CH 100V 36A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF540ZSTRLPBF, features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 36A at 25°C (Tc). This device offers a maximum on-resistance (Rds On) of 26.5mOhm at 22A and 10V Vgs. The IRF540ZSTRLPBF is housed in a TO-263-3, D2PAK package, designed for surface mounting. Key parameters include a gate charge (Qg) of 63nC max at 10V and input capacitance (Ciss) of 1770pF max at 25V. With a maximum power dissipation of 92W (Tc) and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for applications in automotive, industrial power, and telecommunications sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 26.5mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 92W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1770 pF @ 25 V |