IRF540ZSTRL
MOSFET N-CH 100V 36A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, IRF540ZSTRL, offers 100V drain-source breakdown voltage and 36A continuous drain current at 25°C (Tc). This device features a low on-resistance of 26.5mOhm maximum at 22A and 10V gate drive. The gate charge is 63nC maximum at 10V, with input capacitance Ciss rated at 1770pF maximum at 25V. Designed for surface mount applications, it utilizes a D2PAK (TO-263-3) package. The maximum power dissipation is 92W at 25°C (Tc), and it operates across a temperature range of -55°C to 175°C. This component is suitable for power management applications in various industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 26.5mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 92W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1770 pF @ 25 V |
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