IRF540ZLPBF
MOSFET N-CH 100V 36A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF540ZLPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 36A at 25°C (Tc). The Rds(On) is specified at a maximum of 26.5mOhm at 22A and a gate-source voltage (Vgs) of 10V, with a drive voltage of 10V. Key parameters include a gate charge (Qg) of 63 nC (typical) and input capacitance (Ciss) of 1770 pF (maximum) at 25V. With a maximum power dissipation of 92W (Tc), this MOSFET is suitable for use in industrial automation, power supplies, and motor control systems. It is supplied in a TO-262 package with through-hole mounting and operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 26.5mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 92W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1770 pF @ 25 V |
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