IRF540ZL
MOSFET N-CH 100V 36A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF540ZL is an N-Channel Power MOSFET designed for high-efficiency switching applications. This through-hole component features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 36A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 26.5mOhm at 22A and 10V gate-source voltage (Vgs). With a maximum power dissipation of 92W (Tc) and a low gate charge (Qg) of 63 nC at 10V, it is suitable for power management circuits. The TO-262-3 Long Leads package ensures robust thermal performance and ease of assembly. Applications include power supplies, motor control, and automotive electronics.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 26.5mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 92W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1770 pF @ 25 V |
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