IRF540Z
MOSFET N-CH 100V 36A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF540Z is a 100V N-Channel power MOSFET designed for demanding applications. This through-hole component features a continuous drain current of 36A at 25°C (Tc) and a maximum power dissipation of 92W (Tc). The Rds On is specified at a maximum of 26.5mOhm at 22A and 10V gate drive. Key parameters include a Vgs(th) of 4V (max) at 250µA, a gate charge (Qg) of 63 nC at 10V, and input capacitance (Ciss) of 1770 pF at 25V. The device operates within a temperature range of -55°C to 175°C (TJ) and is packaged in a TO-220AB. This MOSFET is commonly utilized in power supply units, motor control, and general-purpose switching applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 26.5mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 92W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1770 pF @ 25 V |
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