IRF540NSPBF
MOSFET N-CH 100V 33A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF540NSPBF, offers a 100V drain-source voltage and 33A continuous drain current at 25°C. This surface mount device, packaged in a D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB), features a maximum on-resistance of 44mOhm at 16A and 10V gate-source voltage. With a gate charge of 71nC at 10V and input capacitance of 1960pF, it is suitable for applications requiring efficient switching. The device supports a maximum gate-source voltage of ±20V and a threshold voltage of 4V at 250µA. Its 130W power dissipation at 25°C (Tc) and operating temperature range of -55°C to 175°C make it a robust component for industrial power supplies, automotive electronics, and motor control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1960 pF @ 25 V |
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