IRF530NSTRRPBF
MOSFET N-CH 100V 17A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF530NSTRRPBF is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain current (Id) of 17A at a case temperature of 25°C. The Rds(On) is specified at a maximum of 90mOhm at 9A and 10V Vgs. With a gate charge (Qg) of 37 nC at 10V, it offers optimized switching characteristics. The device operates across a wide temperature range from -55°C to 175°C. Housed in a TO-263-3, D2PAK package, it is supplied on tape and reel (TR) for automated assembly. This MOSFET is commonly utilized in industrial and automotive sectors for power management and control circuits.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 70W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 25 V |
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