IRF530NL
MOSFET N-CH 100V 17A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF530NL is an N-channel power MOSFET designed for demanding applications. This component features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 17A at 25°C (Tc). With a maximum Rds(on) of 90mOhm at 9A and 10V Vgs, it offers efficient switching performance. Key electrical characteristics include a gate charge (Qg) of 37nC at 10V and an input capacitance (Ciss) of 920pF at 25V. The device supports a gate-source voltage (Vgs) range of ±20V. Power dissipation is rated at 70W (Tc) and 3.8W (Ta). The IRF530NL is housed in a TO-262-3 Long Leads package, suitable for through-hole mounting. This MOSFET is frequently utilized in industrial motor control, power supply units, and automotive electronics.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 70W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 25 V |
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