IRF5305STRRPBF
MOSFET P-CH 55V 31A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF5305STRRPBF is a P-channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 31A at 25°C (Tc). With a low on-resistance of 60mOhm maximum at 16A and 10V Vgs, it offers efficient power handling. The IRF5305STRRPBF supports a gate drive voltage of 10V and has a maximum gate-source voltage (Vgs) of ±20V. Key capacitances include input capacitance (Ciss) of 1200pF maximum at 25V Vds and gate charge (Qg) of 63nC maximum at 10V Vgs. Power dissipation is rated at 3.8W (Ta) and 110W (Tc). This component is housed in a TO-263-3, D2PAK (2 Leads + Tab) surface mount package, supplied on tape and reel. It operates across a temperature range of -55°C to 175°C (TJ). Applications include power management in industrial automation, automotive systems, and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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