IRF5305STRR
MOSFET P-CH 55V 31A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF5305STRR is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain to Source Voltage (Vdss) of 55V and a continuous drain current capability of 31A at 25°C (Tc). The Rds On is specified at a maximum of 60mOhm when driven at 16A with a 10V Vgs. With a Gate Charge (Qg) of 63 nC at 10V and an Input Capacitance (Ciss) of 1200 pF at 25V, this MOSFET offers efficient switching characteristics. The D2PAK (TO-263-3) surface mount package, supplied on tape and reel, facilitates high-volume manufacturing. Power dissipation is rated at 3.8W (Ta) and 110W (Tc). The operating temperature range is -55°C to 175°C. This device is commonly utilized in power management, automotive, and industrial systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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