IRF5305LPBF
MOSFET P-CH 55V 31A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF5305LPBF, offers a 55V drain-to-source voltage and 31A continuous drain current at 25°C. This through-hole component features a low on-resistance of 60mOhm maximum at 16A and 10V gate-source voltage. The gate charge is specified at 63nC maximum at 10V, with a typical input capacitance of 1200pF at 25V. This device is housed in a TO-262-3 package with extended leads, also known as I2PAK or TO-262AA. Maximum power dissipation is 110W at 25°C case temperature and 3.8W at 25°C ambient temperature. Operating temperature range is -55°C to 175°C. The IRF5305LPBF is utilized in power management applications across industrial and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |