IRF5210STRRPBF
MOSFET P-CH 100V 38A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF5210STRRPBF, offers a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 38A at 25°C (Tc). This device features a low on-resistance (Rds On) of 60mOhm maximum at 38A and 10V gate-source voltage. With a gate charge (Qg) of 230 nC maximum at 10V and input capacitance (Ciss) of 2780 pF maximum at 25V, it is suitable for demanding power switching applications. The IRF5210STRRPBF is housed in a D2PAK (TO-263-3) surface mount package and operates across a temperature range of -55°C to 150°C. Its robust power dissipation capabilities include 3.1W (Ta) and 170W (Tc). This MOSFET is commonly utilized in industrial automation, automotive systems, and power management solutions.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2780 pF @ 25 V |
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