IRF5210SPBF
MOSFET P-CH 100V 38A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF5210SPBF is a P-Channel Power MOSFET designed for demanding applications. This component offers a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) capability of 38A at 25°C (Tc). The device features a low on-resistance (Rds On) of 60mOhm maximum at 38A and 10V gate drive. With a gate charge (Qg) of 230 nC maximum at 10V and input capacitance (Ciss) of 2780 pF maximum at 25V, it facilitates efficient switching. The IRF5210SPBF has a maximum continuous gate-to-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V maximum at 250µA. Power dissipation is rated at 3.1W (Ta) and 170W (Tc). This surface mount device is housed in a TO-263-3, D2PAK package, making it suitable for high-power density designs in automotive and industrial power control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2780 pF @ 25 V |