IRF5210LPBF
MOSFET P-CH 100V 38A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® IRF5210LPBF is a P-Channel Power MOSFET designed for demanding applications. This through-hole component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 38A at 25°C. The device exhibits a maximum Rds(on) of 60mOhm at 38A and 10V, with a gate charge (Qg) of 230 nC at 10V. It offers robust power dissipation capabilities, rated at 170W (Tc) and 3.1W (Ta). The TO-262-3 Long Leads package provides efficient thermal management. Industries utilizing this MOSFET include automotive, industrial motor control, and power supply systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2780 pF @ 25 V |