IRF5210L
MOSFET P-CH 100V 40A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF5210L. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain current (Id) of 40A at 25°C (Tc). The Rds On is specified at a maximum of 60mOhm at 24A and 10V gate drive. With a gate charge (Qg) of 180 nC at 10V, this MOSFET is suitable for applications requiring efficient power switching. The component is packaged in a TO-262 package with long leads, designed for through-hole mounting. Key parameters include input capacitance (Ciss) of 2700 pF at 25V and a maximum power dissipation of 200W at 25°C (Tc). This component is commonly utilized in power management and industrial applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |