IRF520NSTRR
MOSFET N-CH 100V 9.7A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF520NSTRR, features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 9.7A at 25°C (Tc). This surface mount device utilizes Metal Oxide technology and is housed in a TO-263-3, D2PAK package. Key parameters include a maximum Rds On of 200mOhm at 5.7A and 10V, with a gate charge (Qg) of 25 nC at 10V. Input capacitance (Ciss) is rated at 330 pF maximum at 25V. Power dissipation is rated at 3.8W (Ta) and 48W (Tc). This component is suitable for applications in industrial and automotive power management.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 5.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |
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