IRF520NS
MOSFET N-CH 100V 9.7A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF520NS is an N-Channel power MOSFET featuring 100V drain-to-source voltage and 9.7A continuous drain current at 25°C case temperature. This device offers a low on-resistance of 200mOhm maximum at 5.7A and 10V Vgs, with a gate charge of 25nC maximum at 10V. The IRF520NS has an input capacitance of 330pF maximum at 25V and a gate-source voltage rating of ±20V. It is packaged in a TO-263-3, D2PAK surface mount package and operates across a temperature range of -55°C to 175°C. Power dissipation is rated at 3.8W ambient and 48W case temperature. This component is suitable for applications in power supplies, motor control, and general-purpose switching.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 5.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |